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Browsing by Author 田部, 道晴 (タベ, ミチハル) (Tabe, Michiharu)

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Showing results 4 to 21 of 21

Title Other Titles	Author(s) Language (ISO)	Journal Title Issue Date	NDC Preview
Observation of discrete dopant potential and its application to Si single-electron devices -	Tabe, Michiharu; Moraru, Daniel; Ligowski, Maciej; Anwar, Miftahul; Yokoi, Kiyohito; Jablonski, Ryszard; Mizuno, Takeshi eng	Thin Solid Films 2010-01-01	549
PとBの同時ドーピングによるSiシングルドーパントデバイスの室温動作化 Toward room temperature operation of Si single-dopant devices by P and B codoping techniques	田部, 道晴 jpn	- 2012-05-15	549
Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires -	Ono, Yukinori; Inokawa, Hiroshi; Tabe, Michiharu; Moraru, Daniel eng	Physical Review B 2007-08	541
Resonant tunneling characteristics in SiO₂/Si double-barrier structures in a wide range of applied voltage -	Ikeda, Hiroya; Iwasaki, Masanori; Ishikawa, Yasuhiko; Tabe, Michiharu eng	Applied Physics Letters 2003-08-18	549
Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope -	Anwar, Miftahul; Kawai, Yuya; Moraru, Daniel; Nowak, Roland; Jablonski, Ryszard; Mizuno, Takeshi; Tabe, Michiharu eng	Japanese Journal of Applied Physics 2011-08-22	549
Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors -	Hamid, Earfan; Moraru, Daniel; Tarido, Juli Cha; Miki, Sakito; Mizuno, Takeshi; Tabe, Michiharu eng	Applied Physics Letters 2010-12-28	549
Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors -	Moraru, Daniel; Ligowski, Maciej; Yokoi, Kiyohito; Mizuno, Takeshi; Tabe, Michiharu eng	Applied Physics Express 2009-07	549
Single-Electron Transport through Single Dopants in a Dopant-Rich Environment -	Tabe, Michiharu; Moraru, Daniel; Maciej, Ligowski; Miftahul, Anwar; Ryszard, Jablonski; Ono, Yukinori; Mizuno, Takeshi eng	Physical Review Letters 2010-07-02	549
Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network -	Ishikawa, Yasuhiko; Yamamoto, Chihiro; Tabe, Michiharu eng	Applied Physics Letters 2006-02-17	541
Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots -	Yokoi, Kiyohito; Moraru, Daniel; Ligowski, Maciej; Tabe, Michiharu eng	Japanese Journal of Applied Physics 2009-02	549
Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array -	Nuryadi, Ratno; Ishikawa, Yasuhiko; Tabe, Michiharu eng	Physical Review B 2006-01	541
Special issue on 2005 Silicon Nanoelectronics Workshop - Foreword -	Tabe, Michiharu; Park, Byung-Gook eng	Nanotechnology 2006-05	541
Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate -	Burhanudin, Zainal A.; Nuryadi, Ratno; Ishikawa, Yasuhiko; Tabe, Michiharu; Ono, Yukinori eng	Applied Physics Letters 2005-09-12	541
Untitled - Foreword -	Hiramoto, Toshiro; Tabe, Michiharu eng	Nanotechnology 2003-12	541
シリコンナノ構造からの電子の電界放出 Electron Field Emission from Si Nanostructures	田部, 道晴; 澤田, 和明; Nuryadi, Ratno; 杉木, 幹生; 石川, 靖彦; 石田, 誠 jpn	電子情報通信学会論文誌. C, エレクトロニクス 2002-09-01	541
シリコン単電子デバイスの時空間輸送制御と新機能の開発 -	田部, 道晴 jpn	- 2009-06-02	549
ナノ多重接合系の輸送制御と新機能デバイスの研究 Nanoscale-multiple-junctions: Transport control and development of new functions	田部, 道晴 jpn	- 2010-05-26	549
少数ドーパントのポテンシャル揺らぎを利用したシリコン単電子転送デバイス Si single-electron transfer devices using potential fluctuation by a few dopants	田部, 道晴 jpn	- 2012-05-15	549

Showing results 4 to 21 of 21

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