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Browsing by Author 早川, 泰弘  (ハヤカワ, ヤスヒロ)  (Hayakawa, Yasuhiro)

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Title Other Titles	Author(s) Language (ISO)	Journal Title Issue Date	NDC Preview
Defect Filtration of Hollow Pyramidal Structured GaSb Epilayers Grown on GaSb (100) Patterned Substrates by Liquid Phase Epitaxy -	Hayakawa, Yasuhiro; Kumagawa, Masashi; Zhang, Cuoqiang; Koyama, Tadanobu eng	日本結晶成長学会誌 2003-07-05	549
Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate -	Deivasigamani, Mouleeswaran; Koyama, Tadanobu; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2009-06-01	549
Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments -	Rajesh, G.; Mukannan, Arivanandhan; Suzuki, N.; Tanaka, Akira; Morii, H.; Aoki, T.; Koyama, Tadanobu; Momose, Y.; Ozawa, T.; Inatomi, Y.; Takagi, Y.; Okano, Y.; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2011-06-01	549
GaAs基板溝構造の転位密度低減効果 -	早川, 泰弘; 熊川, 征司; Howard, A.J.; Pathengy, B.; Jovic, V.; Anderson, T.J.; Watsson, P.; Ast, D. jpn	日本結晶成長学会誌 1990-07-20	549
GaSb引上げ結晶の微視的成長速度と拡がり抵抗 -	熊川, 征司; 巽, 健治; 早川, 泰弘 jpn	日本結晶成長学会誌 1983-06-25	549
GaSb引上げ結晶中の凹界面上のfacet成長 -	熊川, 征司; 石野, 文昭; 早川, 泰弘 jpn	日本結晶成長学会誌 1983-06-25	549
GaSb引上げ結晶中の鋸刃模様 -	熊川, 征司; 西浦, 正昭; 石野, 文昭; 早川, 泰弘 jpn	日本結晶成長学会誌 1983-06-25	549
GaSb回転引上結晶中の特徴的なfacet- off facet境界帯 -	グェン・ヴァン・クァン; 早川, 泰弘; 熊川, 征司 jpn	日本結晶成長学会誌 1980-07-05	549
GaとBiのInSb中への拡散と複合物の発生 -	浜川, 恵美; 安藤, 正彦; 小山, 忠信; 足立, 聡; 高橋, 克巳; 早川, 泰弘 jpn	日本結晶成長学会誌 1994-07-05	549
Growth kinetic study of Liquid Phase Electro Epitaxial growth of InAs : a three dimensional simulation approach(NCCG-36) -	Hayakawa, Yasuhiro; Mouleeswaran, D.; Dhanasekaran, R. eng	日本結晶成長学会誌 2006-11-01	549
Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed -	Hayakawa, Yasuhiro; Murakami, Noriaki; Hikida, Takuya; Konno, Akiko; Arafune, Koji; Koyama, Tadanobu; Miyazawa, Masafumi; Kumagawa, Masashi eng	Journal of Crystal Growth 2008-04	549
Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications -	Arivanandhan, M.; Saito, Y.; Koyama, T.; Momose, Y.; Ikeda, H.; Tanaka, A.; Tatsuoka, T.; Aswal, D.K.; Inatomi, Y.; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2011-03-01	549
In situ observation of composition profiles in the solution by X-ray penetration method -	Hayakawa, Yasuhiro; Hikida, Takuya; Morii, Hisashi; Konno, Akiko; Chen, Chung-Hao; Arafune, Koji; Kawai, Hideki; Koyama, Tadanobu; Momose, Yoshimi; Ozawa, Tetsuo; Aoki, Toru eng	Journal of Crystal Growth 2008-04	549
In-Ga-Sb融液の均一分散混合の地上実験 -	興津, 和彦; 早川, 泰弘; 平田, 彰; 今石, 宣之; 橘, 正人; 岡野, 泰則; 山口, 十六夫; 熊川, 征司 jpn	日本結晶成長学会誌 1994-07-05	549
In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method -	Rajesh, G.; Arivanandhan, M.; Morii, H.; Aoki, T.; Koyama, T.; Momose, Y.; Tanaka, A.; Ozawa, T.; Inatomi, Y.; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2010-09-15	549
InAs組成変換基板上への高In組成比InGaAs成長: エピキタシャル成長IV Growth of In_xGa_<1-x> As on compositions converted InAs substrates	永井, 洋希; 飯田, 晋; 小山, 忠信; 熊川, 征司; 早川, 泰弘; バラクリシュナン jpn	日本結晶成長学会誌 2002-07-01	549
Influence of Te impurity on morphology of GaSb epilayer grown on GaSb (001) patterned substrate by liquid phase epitaxy -	Zhang, G.; Jayavel, P.; Koyama, Tadanobu; Kumagawa, Masashi; Hayakawa, Yasuhiro eng	Journal of Applied Physics 2004-12-27	541
InGaAs/GaAsヘテロエピキタシー -	菊澤, 充男; 柳田, 浩行; 早川, 泰弘; 熊川, 征司 jpn	日本結晶成長学会誌 1994-07-05	549
InGaAsSb四元混晶半導体のバルク結晶成長 -	早川, 泰弘; 小澤, 哲夫; 安藤, 正彦; 中野, 学; 熊川, 征司 jpn	日本結晶成長学会誌 1992-06-25	549
InGaAs三元混晶半導体のパルク結晶成長 -	安藤, 正彦; 小澤, 哲夫; 早川, 泰弘; 熊川, 征司 jpn	日本結晶成長学会誌 1992-06-25	549