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Browsing by Journal Title Journal of Crystal Growth

Title Other Titles	Author(s) Language (ISO)	Journal Title Issue Date	NDC Preview
Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate -	Deivasigamani, Mouleeswaran; Koyama, Tadanobu; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2009-06-01	549
Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments -	Rajesh, G.; Mukannan, Arivanandhan; Suzuki, N.; Tanaka, Akira; Morii, H.; Aoki, T.; Koyama, Tadanobu; Momose, Y.; Ozawa, T.; Inatomi, Y.; Takagi, Y.; Okano, Y.; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2011-06-01	549
Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed -	Hayakawa, Yasuhiro; Murakami, Noriaki; Hikida, Takuya; Konno, Akiko; Arafune, Koji; Koyama, Tadanobu; Miyazawa, Masafumi; Kumagawa, Masashi eng	Journal of Crystal Growth 2008-04	549
Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications -	Arivanandhan, M.; Saito, Y.; Koyama, T.; Momose, Y.; Ikeda, H.; Tanaka, A.; Tatsuoka, T.; Aswal, D.K.; Inatomi, Y.; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2011-03-01	549
In situ observation of composition profiles in the solution by X-ray penetration method -	Hayakawa, Yasuhiro; Hikida, Takuya; Morii, Hisashi; Konno, Akiko; Chen, Chung-Hao; Arafune, Koji; Kawai, Hideki; Koyama, Tadanobu; Momose, Yoshimi; Ozawa, Tetsuo; Aoki, Toru eng	Journal of Crystal Growth 2008-04	549
In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method -	Rajesh, G.; Arivanandhan, M.; Morii, H.; Aoki, T.; Koyama, T.; Momose, Y.; Tanaka, A.; Ozawa, T.; Inatomi, Y.; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2010-09-15	549
Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy -	Mouleeswaran, D.; Koyama, T.; Hayakawa, Yasuhiro eng	Journal of Crystal Growth 2011-04-15	549
The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon -	Arivanandhan, Mukannan; Gotoh, Raira; Fujiwara, Kozo; Ozawa, Tetsuo; Hayakawa, Yasuhiro; Uda, Satoshi eng	Journal of Crystal Growth 2011-04-15	549