Influence of Te impurity on morphology of GaSb epilayer grown on GaSb (001) patterned substrate by liquid phase epitaxy

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Title:	Influence of Te impurity on morphology of GaSb epilayer grown on GaSb (001) patterned substrate by liquid phase epitaxy
Authors:	Zhang, G. Jayavel, P. Koyama, Tadanobu Kumagawa, Masashi Hayakawa, Yasuhiro
Journal Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
Journal Volume:	97
Journal Issue:	2
Start Page:	023518
End Page:	023518
Issue Date:	2004-12-27
Rights:	(c)2005 American Institute of Physics
NDC:	541
ISSN:	00218979
E-ISSN:	10897550
DOI:	10.1063/1.1834723
Journal NCID:	AA00693547
LINK:	http://link.aip.org/link/?JAPIAU/97/023518/1
Textversion:	publisher
Appears in Collections:	21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Zhang, G. -- Jayavel, P. -- Koyama, Tadanobu (小山, 忠信) (コヤマ, タダノブ) -- Kumagawa, Masashi (熊川, 征司) (クマガワ, マサシ) -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ)