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Please use this identifier to cite or link to this item: http://hdl.handle.net/10297/2772
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Title: Coalescence of ELO layers of InGaAS grown on patterned (111) GaAs by LPE
Authors: Hayakawa, Yasuhiro
Kumagawa, Masashi
Balakrishnan, K.
Iida, Susumu
Journal Title: 日本結晶成長学会誌
Publisher: Japanese Association for Crystal Growth
Journal Volume: 27
Journal Issue: 1
Start Page: 41
End Page: 41
Issue Date: 2000-07-01
Rights: (C)日本結晶成長学会: 本文データは学協会の許諾に基づきCiNiiから複製したものである
NDC: 549
ISSN: 03856275 OPAC
Article NAID: 110002715260 ciniia
Journal NCID: AN00188386 OPAC ciniib
Textversion: publisher
Appears in Collections:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ) -- Kumagawa, Masashi (熊川, 征司) (クマガワ, マサシ) -- Balakrishnan, K. (クリシュナン, バラクリシュナン) (クリシュナン, バラクリシュナン) (Krishnan, Balakrishnan) -- Iida, Susumu (飯田, 晋) (イイダ, ススム)

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