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Title: High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
Authors: Takano, Yasushi
Morizumi, Kenta
Watanabe, Satoshi
Masuda, Hiroyuki
Okamoto, Takuya
Noda, Kunihiro
Fukuda, Shinya
Ozeki, Tomokazu
Kuwahara, Kazuhiro
Fuke, Shunro
Furukawa, Yuzo
Yonezu, Hiroo
Journal Title: Japanese Journal of Applied Physics
Publisher: Japan Society of Applied Physics
Journal Volume: 48
Journal Issue: 1
Start Page: 011102-1
End Page: 011102-7
Issue Date: 2009-01
Rights: Copyright © 2009 The Japan Society of Applied Physics
NDC: 549
ISSN: 00214922 OPAC
E-ISSN: 13474065 OPAC
DOI: 10.1143/JJAP.48.011102   
Article NAID: 40016425902 ciniia
Journal NCID: AA12295836 OPAC ciniib
Textversion: author
Appears in Collections:05. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Takano, Yasushi (高野, 泰) (タカノ, ヤスシ) -- Morizumi, Kenta -- Watanabe, Satoshi -- Masuda, Hiroyuki -- Okamoto, Takuya -- Noda, Kunihiro -- Fukuda, Shinya -- Ozeki, Tomokazu -- Kuwahara, Kazuhiro -- Fuke, Shunro (福家, 俊郎) (フケ, シュンロウ) -- Furukawa, Yuzo -- Yonezu, Hiroo

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