High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

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Title:	High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
Authors:	Takano, Yasushi Morizumi, Kenta Watanabe, Satoshi Masuda, Hiroyuki Okamoto, Takuya Noda, Kunihiro Fukuda, Shinya Ozeki, Tomokazu Kuwahara, Kazuhiro Fuke, Shunro Furukawa, Yuzo Yonezu, Hiroo
Journal Title:	Japanese Journal of Applied Physics
Publisher:	Japan Society of Applied Physics
Journal Volume:	48
Journal Issue:	1
Start Page:	011102-1
End Page:	011102-7
Issue Date:	2009-01
Rights:	Copyright © 2009 The Japan Society of Applied Physics
NDC:	549
ISSN:	00214922
E-ISSN:	13474065
DOI:	10.1143/JJAP.48.011102
Article NAID:	40016425902
Journal NCID:	AA12295836
Textversion:	author
Appears in Collections:	05. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Takano, Yasushi (高野, 泰) (タカノ, ヤスシ) -- Morizumi, Kenta -- Watanabe, Satoshi -- Masuda, Hiroyuki -- Okamoto, Takuya -- Noda, Kunihiro -- Fukuda, Shinya -- Ozeki, Tomokazu -- Kuwahara, Kazuhiro -- Fuke, Shunro (福家, 俊郎) (フケ, シュンロウ) -- Furukawa, Yuzo -- Yonezu, Hiroo