Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide

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Title:	Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
Authors:	Singh, Vipul Inokawa, Hiroshi Endoh, Tetsuo Satoh, Hiroaki
Journal Title:	Japanese Journal of Applied Physics
Publisher:	Japan Society of Applied Physics
Journal Volume:	49
Journal Issue:	12
Start Page:	128002-1
End Page:	128002-2
Issue Date:	2010
Rights:	Copyright © 2010 The Japan Society of Applied Physics.
NDC:	549
ISSN:	00214922
E-ISSN:	13474065
DOI:	10.1143/JJAP.49.128002
Article NAID:	150000053414
Journal NCID:	AA00690800
Textversion:	author
Appears in Collections:	21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Singh, Vipul -- Inokawa, Hiroshi (猪川, 洋) (イノカワ, ヒロシ) -- Endoh, Tetsuo -- Satoh, Hiroaki (佐藤, 弘明) (サトウ, ヒロアキ)