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Title: Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
Authors: Singh, Vipul
Inokawa, Hiroshi
Endoh, Tetsuo
Satoh, Hiroaki
Journal Title: Japanese Journal of Applied Physics
Publisher: Japan Society of Applied Physics
Journal Volume: 49
Journal Issue: 12
Start Page: 128002-1
End Page: 128002-2
Issue Date: 2010
Rights: Copyright © 2010 The Japan Society of Applied Physics.
NDC: 549
ISSN: 00214922 OPAC
E-ISSN: 13474065 OPAC
Publisher's DOI: 10.1143/JJAP.49.128002   
Article NAID: 150000053414 ciniia
Journal NCID: AA00690800 OPAC ciniib
Textversion: author
Appears in Collections:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Singh, Vipul -- Inokawa, Hiroshi (猪川, 洋) (イノカワ, ヒロシ) -- Endoh, Tetsuo -- Satoh, Hiroaki (佐藤, 弘明) (サトウ, ヒロアキ)

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