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タイトル: Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy
著者: Mouleeswaran, D.
Koyama, T.
Hayakawa, Yasuhiro
掲載誌名: Journal of Crystal Growth
出版者: Elsevier
巻: 321
号: 1
開始ページ: 85
終了ページ: 90
出版日付: 2011-04-15
権利: Copyright © 2011 Elsevier B.V. All rights reserved.
NDC: 549
抄録: The orientation dependence of the selective epitaxial growth of Gallium Arsenide (GaAs) has been investigated to achieve a thick epitaxial layer for application to X-ray detectors. Selective epitaxial growth was carried out on patterned GaAs with [0 1 1], [0 1 2], [0 1 0], [0 1 −2], [0 1 −1] and their equivalent seed orientations by current-controlled liquid phase epitaxy (CCLPE). SiO2 was used as a mask layer to fabricate the various seed orientations on the Si-doped GaAs (1 0 0) substrate and various growth periods and current densities were considered. Solute transport in the solution was enhanced by the electromigration of solute by an applied DC electric current, which caused an incremental growth in vertical and lateral directions in all orientations. The highest vertical thickness of 268 μm in the [0 1 −1] orientation and the largest lateral growth of 318 μm in the [0 1 2] orientation were achieved at 7.5 A cm−2 current density for 6 h. The seed aligned in the [0 1 2] orientation was favorable for high lateral growth of GaAs. The [0 1 1], [0 1 0] and [0 1 −2] seed orientations were suitable for application in a GaAs X-ray detector.
ISSN: 00220248 OPAC
出版者DOI: 10.1016/j.jcrysgro.2011.02.026   
NII書誌ID: AA00696341 OPAC ciniib
バージョン: author
出現コレクション:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Mouleeswaran, D. -- Koyama, T. -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ)



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