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タイトル: Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications
著者: Arivanandhan, M.
Saito, Y.
Koyama, T.
Momose, Y.
Ikeda, H.
Tanaka, A.
Tatsuoka, T.
Aswal, D.K.
Inatomi, Y.
Hayakawa, Yasuhiro
掲載誌名: Journal of Crystal Growth
出版者: Elsevier
巻: 318
号: 1
開始ページ: 324
終了ページ: 327
出版日付: 2011-03-01
権利: Copyright © 2010 Elsevier B.V. All rights reserved.
NDC: 549
抄録: Compositionally homogeneous Si0.52Ge0.48 bulk crystals were grown under a mild temperature gradient using a Si(seed)/Ge/Si(feed) sandwich structure for thermoelectric (TE) applications. The furnace temperature was kept constant for 300 h for the growth of homogeneous Si1-xGex bulk crystal with various temperature gradients. The temperature gradient of 0.4 degrees C/mm resulted in homogeneous Si0.52Ge0.48 bulk crystals of 22 mm length with a Ge compositional fluctuation of about 0.0023/mm. The compositions of the grown crystals were determined by means of Electron Probe Micro-Analysis (EPMA). Electrical resistivity and Seebeck coefficient of the prepared samples were measured using in-house built measurement system. It was found that the compositional fluctuation of Ge was decreased as the temperature gradient of the furnace decreased. The prepared Si0.52Ge0.48 sample showed high Seebeck coefficient compared to that of pure Si and Ge crystals.
ISSN: 00220248 OPAC
出版者DOI: 10.1016/j.jcrysgro.2010.10.062   
NII書誌ID: AA00696341 OPAC ciniib
バージョン: author
出現コレクション:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Arivanandhan, M. (ムカンナン, アリバナンドハン) (ムカンナン, アリバナンドハン) (Mukannan, Arivanandhan) -- Saito, Y. -- Koyama, T. -- Momose, Y. -- Ikeda, H. -- Tanaka, A. -- Tatsuoka, T. -- Aswal, D.K. -- Inatomi, Y. -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ)



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