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Title: Growth of Si1-xGex bulk crystals with highly homogeneous composition for thermoelectric applications
Authors: Arivanandhan, M.
Saito, Y.
Koyama, T.
Momose, Y.
Ikeda, H.
Tanaka, A.
Tatsuoka, T.
Aswal, D.K.
Inatomi, Y.
Hayakawa, Yasuhiro
Journal Title: Journal of Crystal Growth
Publisher: Elsevier
Journal Volume: 318
Journal Issue: 1
Start Page: 324
End Page: 327
Issue Date: 2011-03-01
Rights: Copyright © 2010 Elsevier B.V. All rights reserved.
NDC: 549
Abstract: Compositionally homogeneous Si0.52Ge0.48 bulk crystals were grown under a mild temperature gradient using a Si(seed)/Ge/Si(feed) sandwich structure for thermoelectric (TE) applications. The furnace temperature was kept constant for 300 h for the growth of homogeneous Si1-xGex bulk crystal with various temperature gradients. The temperature gradient of 0.4 degrees C/mm resulted in homogeneous Si0.52Ge0.48 bulk crystals of 22 mm length with a Ge compositional fluctuation of about 0.0023/mm. The compositions of the grown crystals were determined by means of Electron Probe Micro-Analysis (EPMA). Electrical resistivity and Seebeck coefficient of the prepared samples were measured using in-house built measurement system. It was found that the compositional fluctuation of Ge was decreased as the temperature gradient of the furnace decreased. The prepared Si0.52Ge0.48 sample showed high Seebeck coefficient compared to that of pure Si and Ge crystals.
ISSN: 00220248 OPAC
DOI: 10.1016/j.jcrysgro.2010.10.062   
Journal NCID: AA00696341 OPAC ciniib
Textversion: author
Appears in Collections:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Arivanandhan, M. (ムカンナン, アリバナンドハン) (ムカンナン, アリバナンドハン) (Mukannan, Arivanandhan) -- Saito, Y. -- Koyama, T. -- Momose, Y. -- Ikeda, H. -- Tanaka, A. -- Tatsuoka, T. -- Aswal, D.K. -- Inatomi, Y. -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ)

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