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タイトル: The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
著者: Arivanandhan, Mukannan
Gotoh, Raira
Fujiwara, Kozo
Ozawa, Tetsuo
Hayakawa, Yasuhiro
Uda, Satoshi
掲載誌名: Journal of Crystal Growth
出版者: Elsevier
巻: 321
号: 1
開始ページ: 24
終了ページ: 28
出版日付: 2011-04-15
権利: Copyright © 2011 Elsevier B.V. All rights reserved.
NDC: 549
抄録: The intensity of the infrared absorption band at 1107 cm−1, related to interstitial oxygen (Oi) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ–Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ–Si wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (>1×1018 cm−3) codoped CZ–Si wafers. These results suggest that the grown-in O precipitates increase as the Oi concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved Oi concentration in the Si lattice.
ISSN: 00220248 OPAC
出版者DOI: 10.1016/j.jcrysgro.2011.02.028   
NII書誌ID: AA00696341 OPAC ciniib
バージョン: author
出現コレクション:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Arivanandhan, Mukannan (ムカンナン, アリバナンドハン) (ムカンナン, アリバナンドハン) (Mukannan, Arivanandhan) -- Gotoh, Raira -- Fujiwara, Kozo -- Ozawa, Tetsuo (小澤, 哲夫) (オザワ, テツオ) -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ) -- Uda, Satoshi



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