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Title: The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
Authors: Arivanandhan, Mukannan
Gotoh, Raira
Fujiwara, Kozo
Ozawa, Tetsuo
Hayakawa, Yasuhiro
Uda, Satoshi
Journal Title: Journal of Crystal Growth
Publisher: Elsevier
Journal Volume: 321
Journal Issue: 1
Start Page: 24
End Page: 28
Issue Date: 2011-04-15
Rights: Copyright © 2011 Elsevier B.V. All rights reserved.
NDC: 549
Abstract: The intensity of the infrared absorption band at 1107 cm−1, related to interstitial oxygen (Oi) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ–Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ–Si wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (>1×1018 cm−3) codoped CZ–Si wafers. These results suggest that the grown-in O precipitates increase as the Oi concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved Oi concentration in the Si lattice.
ISSN: 00220248 OPAC
Publisher's DOI: 10.1016/j.jcrysgro.2011.02.028   
Journal NCID: AA00696341 OPAC ciniib
Textversion: author
Appears in Collections:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Arivanandhan, Mukannan (ムカンナン, アリバナンドハン) (ムカンナン, アリバナンドハン) (Mukannan, Arivanandhan) -- Gotoh, Raira -- Fujiwara, Kozo -- Ozawa, Tetsuo (小澤, 哲夫) (オザワ, テツオ) -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ) -- Uda, Satoshi

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