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SURE: Shizuoka University REpository >
21. 電子工学研究所 = Research Institute of Electronics >
21. 雑誌論文・記事(Journal Article, Article, Preprint) >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10297/5709
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| Title: | Schottky contact on ZnO nano-columnar film with H2O2 treatment |
| Authors: | Nakamura, Atsushi
Temmyo, Jiro |
| Journal Title: | Journal of Applied Physics |
| Publisher: | American Institute of Physics |
| Journal Volume: | 109 |
| Journal Issue: | 9 |
| Start Page: | 093517 |
| Issue Date: | 2011-05-10 |
| Rights: | © 2011 American Institute of Physics |
| NDC: | 549 |
| Abstract: | The surface treatment with boiling hydrogen peroxide (H2O2) solution on the surface of ZnO nano-columnar film was investigated. Field emission-SEM and TEM analysis revealed that amorphous ZnO2 layer covers the ZnO nano-column surface through the H2O2 treatment at 100 degrees C for 1 min. X-ray photoemission spectroscopy (XPS) has been conducted on the H2O2 treated ZnO surface. The surface exhibits high resistive conductivity after the H2O2 treatment, suggesting that the treatment promotes a compensation effect. We demonstrate that dramatic improvement in the rectifying behavior on the Schottky diodes can be achieved by inserting a ZnO2 interface layer between the Pt Schottky electrode and the ZnO nano-column film. The ZnO2 interface layer promotes surface passivation and suppresses the surface leakage current. This is expected to increase the Schottky barrier height to 0.78 eV. The H2O2 treated Schottky diode showed five orders of magnitude in current rectification between forward and reverse bias at 3 V. (C) 2011 American Institute of Physics. |
| ISSN: | 00218979  |
| DOI: | 10.1063/1.3582143 |
| Journal NCID: | AA00693547  |
| Textversion: | publisher |
| Appears in Collections: | 21. 雑誌論文・記事(Journal Article, Article, Preprint)
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