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タイトル: Schottky contact on ZnO nano-columnar film with H2O2 treatment
著者: Nakamura, Atsushi
Temmyo, Jiro
掲載誌名: Journal of Applied Physics
出版者: American Institute of Physics
巻: 109
号: 9
開始ページ: 093517
出版日付: 2011-05-10
権利: © 2011 American Institute of Physics
NDC: 549
抄録: The surface treatment with boiling hydrogen peroxide (H2O2) solution on the surface of ZnO nano-columnar film was investigated. Field emission-SEM and TEM analysis revealed that amorphous ZnO2 layer covers the ZnO nano-column surface through the H2O2 treatment at 100 degrees C for 1 min. X-ray photoemission spectroscopy (XPS) has been conducted on the H2O2 treated ZnO surface. The surface exhibits high resistive conductivity after the H2O2 treatment, suggesting that the treatment promotes a compensation effect. We demonstrate that dramatic improvement in the rectifying behavior on the Schottky diodes can be achieved by inserting a ZnO2 interface layer between the Pt Schottky electrode and the ZnO nano-column film. The ZnO2 interface layer promotes surface passivation and suppresses the surface leakage current. This is expected to increase the Schottky barrier height to 0.78 eV. The H2O2 treated Schottky diode showed five orders of magnitude in current rectification between forward and reverse bias at 3 V. (C) 2011 American Institute of Physics.
ISSN: 00218979 OPAC
出版者DOI: 10.1063/1.3582143   
NII書誌ID: AA00693547 OPAC ciniib
バージョン: publisher
出現コレクション:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Nakamura, Atsushi (中村, 篤志) (ナカムラ, アツシ) -- Temmyo, Jiro (天明, 二郎) (テンミョウ, ジロウ)



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