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Title: Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments
Authors: Rajesh, G.
Mukannan, Arivanandhan
Suzuki, N.
Tanaka, Akira
Morii, H.
Aoki, T.
Koyama, Tadanobu
Momose, Y.
Ozawa, T.
Inatomi, Y.
Takagi, Y.
Okano, Y.
Hayakawa, Yasuhiro
Journal Title: Journal of Crystal Growth
Publisher: Elsevier
Journal Volume: 324
Journal Issue: 1
Start Page: 157
End Page: 162
Issue Date: 2011-06-01
Rights: Copyright © 2011 Elsevier B.V. All rights reserved.
NDC: 549
Abstract: We investigated the dissolution process of GaSb into InSb melt by numerical simulations using the finite volume method. In addition, the dissolution process was in-situ observed by the X-ray penetration method. Rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich structure of sample was considered for the numerical analysis and the same structure of sample was used for the X-ray penetration experiment. The numerical and experimental results were comparatively analysed. From the results, it was found that the quantity of the dissolved GaSb seed (at the low temperature region) was larger than that of the feed (at the high temperature region). The numerical simulation results supported the experimental results well. Both the experiment and the simulation provide deep insight into the dissolution process and composition profile in the solution during the dissolution process of ternary alloy semiconductor crystal growth.
ISSN: 00220248 OPAC
DOI: 10.1016/j.jcrysgro.2011.04.019   
Journal NCID: AA00696341 OPAC ciniib
Textversion: author
Appears in Collections:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Rajesh, G. -- Mukannan, Arivanandhan (ムカンナン, アリバナンドハン) (ムカンナン, アリバナンドハン) -- Suzuki, N. -- Tanaka, Akira (田中, 昭) (タナカ, アキラ) -- Morii, H. -- Aoki, T. -- Koyama, Tadanobu (小山, 忠信) (コヤマ, タダノブ) -- Momose, Y. -- Ozawa, T. -- Inatomi, Y. -- Takagi, Y. -- Okano, Y. -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ)

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