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タイトル: Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments
著者: Rajesh, G.
Mukannan, Arivanandhan
Suzuki, N.
Tanaka, Akira
Morii, H.
Aoki, T.
Koyama, Tadanobu
Momose, Y.
Ozawa, T.
Inatomi, Y.
Takagi, Y.
Okano, Y.
Hayakawa, Yasuhiro
掲載誌名: Journal of Crystal Growth
出版者: Elsevier
巻: 324
号: 1
開始ページ: 157
終了ページ: 162
出版日付: 2011-06-01
権利: Copyright © 2011 Elsevier B.V. All rights reserved.
NDC: 549
抄録: We investigated the dissolution process of GaSb into InSb melt by numerical simulations using the finite volume method. In addition, the dissolution process was in-situ observed by the X-ray penetration method. Rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich structure of sample was considered for the numerical analysis and the same structure of sample was used for the X-ray penetration experiment. The numerical and experimental results were comparatively analysed. From the results, it was found that the quantity of the dissolved GaSb seed (at the low temperature region) was larger than that of the feed (at the high temperature region). The numerical simulation results supported the experimental results well. Both the experiment and the simulation provide deep insight into the dissolution process and composition profile in the solution during the dissolution process of ternary alloy semiconductor crystal growth.
ISSN: 00220248 OPAC
出版者DOI: 10.1016/j.jcrysgro.2011.04.019   
NII書誌ID: AA00696341 OPAC ciniib
バージョン: author
出現コレクション:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Rajesh, G. -- Mukannan, Arivanandhan (ムカンナン, アリバナンドハン) (ムカンナン, アリバナンドハン) -- Suzuki, N. -- Tanaka, Akira (田中, 昭) (タナカ, アキラ) -- Morii, H. -- Aoki, T. -- Koyama, Tadanobu (小山, 忠信) (コヤマ, タダノブ) -- Momose, Y. -- Ozawa, T. -- Inatomi, Y. -- Takagi, Y. -- Okano, Y. -- Hayakawa, Yasuhiro (早川, 泰弘) (ハヤカワ, ヤスヒロ)



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