Shizuoka University
Library
|
SURE: Shizuoka University REpository >
05. 工学部・工学研究科 = Faculty of Engineering >
05. 雑誌論文・記事(Journal Article, Article, Preprint) >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10297/6146
|
| Title: | Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD |
| Authors: | Sakamoto, Naonori
Sugiura, Haruka
Fu, De Sheng
Wakiya, Naoki
Suzuki, Hisao |
| Journal Title: | Key Engineering Materials |
| Publisher: | Materials Science and Engineering |
| Journal Volume: | 445 |
| Start Page: | 209 |
| End Page: | 212 |
| Issue Date: | 2010-07-26 |
| NDC: | 431 |
| Abstract: | InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, AlN, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported. |
| ISSN: | 10139826  |
| E-ISSN: | 16629795 |
| DOI: | 10.4028/www.scientific.net/KEM.445.209 |
| Journal NCID: | AA10697012  |
| LINK: | http://www.scientific.net/KEM |
| Textversion: | author |
| Appears in Collections: | 05. 雑誌論文・記事(Journal Article, Article, Preprint)
|
Google™ Scholar:
Cited By -
Related -
Other Copies
Others By:
Sakamoto, Naonori
( 坂元, 尚紀)
( サカモト, ナオノリ)
-- Sugiura, Haruka
-- Fu, De Sheng
( 符, 徳勝)
( フ, トクショウ)
( Fu, Desheng)
-- Wakiya, Naoki
( 脇谷, 尚樹)
( ワキヤ, ナオキ)
-- Suzuki, Hisao
( 鈴木, 久男)
( スズキ, ヒサオ)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
|
){kind=link}
){kind=link}
){kind=link}
){kind=link}