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Title: Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD
Authors: Sakamoto, Naonori
Sugiura, Haruka
Fu, De Sheng
Wakiya, Naoki
Suzuki, Hisao
Journal Title: Key Engineering Materials
Publisher: Materials Science and Engineering
Journal Volume: 445
Start Page: 209
End Page: 212
Issue Date: 2010-07-26
NDC: 431
Abstract: InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, AlN, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported.
ISSN: 10139826 OPAC
E-ISSN: 16629795 OPAC
Publisher's DOI: 10.4028/   
Journal NCID: AA10697012 OPAC ciniib
Textversion: author
Appears in Collections:05. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Sakamoto, Naonori (坂元, 尚紀) (サカモト, ナオノリ) -- Sugiura, Haruka -- Fu, De Sheng (符, 徳勝) (フ, トクショウ) (Fu, Desheng) -- Wakiya, Naoki (脇谷, 尚樹) (ワキヤ, ナオキ) -- Suzuki, Hisao (鈴木, 久男) (スズキ, ヒサオ)

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