Shizuoka University REpository  title image 
morning
day
evening
night
shizuppy
 

SURE: Shizuoka University REpository >
05. 工学部・工学研究科 = Faculty of Engineering >
05. 雑誌論文・記事(Journal Article, Article, Preprint) >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10297/6146
Bookmark and Share

Files in This Item:

File Description SizeFormat
110902001.pdf509.55 kBAdobe PDFThumbnail
View/Open

Title: Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD
Authors: Sakamoto, Naonori
Sugiura, Haruka
Fu, De Sheng
Wakiya, Naoki
Suzuki, Hisao
Journal Title: Key Engineering Materials
Publisher: Materials Science and Engineering
Journal Volume: 445
Start Page: 209
End Page: 212
Issue Date: 2010-07-26
NDC: 431
Abstract: InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, AlN, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported.
ISSN: 10139826 OPAC
E-ISSN: 16629795 OPAC
DOI: 10.4028/www.scientific.net/KEM.445.209   
Journal NCID: AA10697012 OPAC ciniib
LINK: http://www.scientific.net/KEM
Textversion: author
Appears in Collections:05. 雑誌論文・記事(Journal Article, Article, Preprint)

Google™ Scholar: Cited By - Related - Other Copies

Others By: Sakamoto, Naonori (坂元, 尚紀) (サカモト, ナオノリ) -- Sugiura, Haruka -- Fu, De Sheng (符, 徳勝) (フ, トクショウ) (Fu, Desheng) -- Wakiya, Naoki (脇谷, 尚樹) (ワキヤ, ナオキ) -- Suzuki, Hisao (鈴木, 久男) (スズキ, ヒサオ)

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

DSpace Software Copyright © 2002-2010  Duraspace - Feedback