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Title: Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope
Authors: Anwar, Miftahul
Kawai, Yuya
Moraru, Daniel
Nowak, Roland
Jablonski, Ryszard
Mizuno, Takeshi
Tabe, Michiharu
Journal Title: Japanese Journal of Applied Physics
Publisher: Japan Society of Applied Physics
Journal Volume: 50
Journal Issue: 8
Start Page: 08LB10
Issue Date: 2011-08-22
Rights: © 2011 The Japan Society of Applied Physics
NDC: 549
Abstract: Kelvin probe force microscopy (KFM) working at low temperatures (13 K) is used to study local electronic potential fluctuations induced by individual phosphorus donors. Electronic potential maps were measured at the surface of thin phosphorus-doped channel of silicon-on-insulator field-effect transistors for different values of backgate voltage. We observed local changes of the potential profile with increasing backgate voltage, indicating electron injection in the channel. Single-step changes in the depth of the fine potential wells, observed by changing backgate voltage, are ascribed to single-electron charging in individual donors. For clusters of donors, with overlapped potential wells, electron charging occurs gradually, without single-step behavior, as the backgate voltage becomes more positive.
ISSN: 00214922 OPAC
E-ISSN: 13474065 OPAC
Publisher's DOI: 10.1143/JJAP.50.08LB10   
Journal NCID: AA12295836 OPAC ciniib
Textversion: author
Appears in Collections:21. 雑誌論文・記事(Journal Article, Article, Preprint)

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Others By: Anwar, Miftahul -- Kawai, Yuya -- Moraru, Daniel (モラル, ダニエル イオアン) (モラル, ダニエル イオアン) (Moraru, Daniel Ioan) -- Nowak, Roland -- Jablonski, Ryszard (ヤブロンスキー, リザード) (ヤブロンスキー, リザード) -- Mizuno, Takeshi (水野, 武志) (ミズノ, タケシ) -- Tabe, Michiharu (田部, 道晴) (タベ, ミチハル)

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